type: npn planar silicon power transistor chip : am-gn25c device : amCC44H5 package : to-220 chi p a ppearan c e chi p d i men s ions size in mils in m m chip size 100 x 100 2.5 x 2.5 chip thickness 10.6+/-0.8 0.270 +/- 0.020 bonding pad base 21. 7 x 33. 9 0.550 x 0.860 dimension emitter 25.6. x 33.9 0.650 x 0.860 scribe track width 3.1 0.08 top metal al back metal ag wafer size 4" dia(100mm) surface passivation si3n 4 absolu t e maxi mum ratin g s d escription symbol value unit c ollector c urrent 10 a collector power dissipation 50 w operating and storage junction temperature -55 to +150 overall yield assurance 95 % yield to prime device 95 % item symbol min typ. max. unit condition collecto r- emi tte r v olt age 45 - - v emitter- base voltage 5 - - v collector cut-off current - - 10 emi tte r cut-off current - - 100 collector-emitter saturation voltage - - 1.85 v dc gain 60 - - - notes 1 wafer shall be 100% probed with minimum yield guarantee of 95% to t arget device, assuming assembly condit ions as per int ernat ional norms. 2 in case of partial wafers, wafer area shall be greater than 60%. 3 other s pec i f i c a t ions s hall be a s per c ontra ct. am-gn25c rev_0 081211e ( ratings a t t a = 2 5 o c ) i c p c t j , t s t g o c e l ectri cal c h aractersti c s b v ceo i c = 1 . 0 ma, i b = 0 bv ebo i e =100 ua, i c = 0 i ces a v c e =rated v ceo , v e b = 0 i ebo ua v e b =5.0v, i c = 0 v ce(sat) i c =8a, i b = 0 . 4 a h f e v c e =1v, i c =2a
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